Cooper-pair Raidative Recombination in Semiconductor Heterostructures : Impact on Quantum Optics and Optoelectronics
Cooper-pair Raidative Recombination in Semiconductor Heterostructures : Impact on Quantum Optics and Optoelectronics
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半导体异质结构中的库珀对辐射复合：对量子光学和光电子学的影响
DOI：
10.1143/jjap.51.010114
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
H. Kumano
中科院分区：
文献类型：
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作者：
I.Suemune;H.Sasakura;Y.Hayashi;K.Tanaka;T.Akazaki;Y.Asano;R.Inoue;H.Takayanagi;E.Hanamura;J.-H.Huh;C.Hemannstaedter;S.Odashima;H. Kumano
将库珀对注入到正常介质（例如半导体）中被称为超导体/正常界面处的邻近效应。我们证实了这种注入以及库珀对的贡献，在半导体异质结构的带间光跃迁的急剧增强。本文研究并阐明了铜对发光二极管（CP-LED）的内量子效率与发光寿命的关系。给出了动态光子产生过程的定量描述，并详细讨论了CP-LED中库珀对复合相对于正常电子复合的贡献。
The injection of Cooper pairs into a normal medium such as a semiconductor is known as the proximity effect at the superconductor/normal interface. We confirm this injection as well as the contribution of Cooper pairs to a drastic enhancement of inter-band optical transitions in semiconductor heterostructures. In this paper we investigate and clarify the relation of internal quantum efficiencies and radiative lifetimes in Cooper-pair light emitting diodes (CP-LEDs). A quantitative description of the dynamic photon generation processes is given, and the contribution of the Cooper-pair recombination relative to normal-electron recombination in CP-LEDs is discussed in detail.