Thickness-dependent dielectric and tunable properties of barium stannate titanate thin films
Thickness-dependent dielectric and tunable properties of barium stannate titanate thin films
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DOI：
10.1063/1.3181060
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发表时间：
2009-07
影响因子：
3.2
通讯作者：
Sannian Song;J. Zhai;Lina Gao;X. Yao;Shengbo Lu;Zhengkui Xu
中科院分区：
文献类型：
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作者：
Sannian Song;J. Zhai;Lina Gao;X. Yao;Shengbo Lu;Zhengkui Xu
采用溶胶-凝胶法分别在LaAlO 3（LAO）和Pt/Ti/SiO2/Si衬底上制备了不同厚度的锡钛酸钡Ba（Sn0.15Ti0.85）O3（BTS）薄膜。通过在BTS薄膜上制备叉指电极和平行板电极，形成了共面电容和平行板电容结构。随着薄膜厚度的增加，两种薄膜的介电常数和可调谐性都有所增强，但这两种情况实际上是基于不同的机制。在Pt/Ti/SiO2/Si衬底上沉积的薄膜的厚度依赖性介电性能主要归因于“死层”效应，而在LAO衬底上生长的薄膜的厚度依赖性介电性能主要归因于薄膜的应变和晶粒尺寸。
Barium stannate titanate Ba(Sn0.15Ti0.85)O3 (BTS) thin films with different thicknesses were grown by sol-gel process on single crystal LaAlO3 (LAO) and Pt/Ti/SiO2/Si substrates, respectively. Coplanar capacitance and parallel plate capacitance structure configurations were formed by preparing interdigital electrodes and parallel plate electrodes on BTS thin films. Both of the films exhibited an enhanced dielectric constant and tunability as the film thickness increases but these two cases are actually based on different mechanisms. The thickness dependent dielectric properties of the films deposited on Pt/Ti/SiO2/Si substrates were mainly attributed to the “dead layer” effect while those of the films grown on LAO substrates were due to strain and grain size of the films.