Gallium arsenide nanoparticles: synthesis and characterisation
Gallium arsenide nanoparticles: synthesis and characterisation
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DOI：
10.1039/b305860n
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发表时间：
2003-09
影响因子：
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通讯作者：
M. A. Malik;P. O’Brien;S. Norager;Jason M. Smith
中科院分区：
文献类型：
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作者：
M. A. Malik;P. O’Brien;S. Norager;Jason M. Smith
以GaCl_3和As（NMe_2）_3为原料，在4-乙基吡啶中制备了砷化镓纳米粒子。紫外光谱和发射发光显示出较强的峰后分离的样品反应时间短。时间分辨光致发光（TRPL）进行了使用时间相关单光子计数（TCSPC）。所观察到的发射被证实主要来自GaAs点。粉末XRD数据证实了立方GaAs相的形成。TEM成像显示单分散的纳米颗粒，其尺寸范围为2 nm（对于早期等分试样）至6 nm（对于注射额外前体后的后期样品）。
Gallium arsenide nanoparticles have been prepared from GaCl3 and As(NMe2)3 in 4-ethylpyridine. UV spectra and emission luminescence show strong peaks for samples isolated after short reaction times. Time resolved photoluminescence (TRPL) was carried out using time-correlated single photon counting (TCSPC). The emission observed was confirmed as mainly arising from GaAs dots. Powder XRD data confirm the formation of the cubic GaAs phase. TEM imaging showed monodispersed nanoparticles with sizes ranging from 2 nm (for early aliquots) to 6 nm for later samples after the injection of additional precursor.