Bias stress effect in polyelectrolyte-gated organic field-effect transistors
Bias stress effect in polyelectrolyte-gated organic field-effect transistors
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DOI：
10.1063/1.4798512
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发表时间：
2013-03
影响因子：
4
通讯作者：
H. Sinno;S. Fabiano;X. Crispin;M. Berggren;Isak Engquist
中科院分区：
文献类型：
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作者：
H. Sinno;S. Fabiano;X. Crispin;M. Berggren;Isak Engquist
导致有机晶体管偏置应力不稳定的主要因素是栅极绝缘体-半导体界面附近的移动载流子电荷捕获到局域电子态。本文研究了低压（p型）聚电解质门控有机场效应晶体管（egofet）在不同温度下的偏置应力行为。研究发现，与介电门控ofet的典型偏置应力/恢复相比，这些egfet的应力和恢复速度要快6个数量级。egofet的机制涉及水和带电半导体通道之间的电子转移反应，该反应促进了额外质子扩散到聚电解质中的产生。
A main factor contributing to bias stress instability in organic transistors is charge trapping of mobile carriers near the gate insulator-semiconductor interface into localized electronic states. In this paper, we study the bias stress behavior in low-voltage (p-type) polyelectrolyte-gated organic field effect transistors (EGOFETs) at various temperatures. Stressing and recovery in these EGOFETs are found to occur six orders of magntiude faster than typical bias stress/recovery reported for dielectric-gated OFETs. The mechanism proposed for EGOFETs involves an electron transfer reaction between water and the charged semiconductor channel that promotes the creation of extra protons diffusing into the polyelectrolyte.