Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
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DOI：
10.1063/1.3634026
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发表时间：
2011-09-05
影响因子：
4
通讯作者：
Chien, C. L.
中科院分区：
文献类型：
--
作者：
Wang, Wei-Gang;Hageman, Stephen;Chien, C. L.
CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm)结的隧穿磁阻和垂直磁各向异性与退火时间密切相关。在给定温度下的退火过程中，与具有面内磁各向异性的结相比，磁阻的衰减发生得更早。通过快速热退火研究发现，磁阻的降低与垂直各向异性的退化有关，而不是像常见的面内结那样与杂质扩散有关。讨论了垂直各向异性演化的起源以及进一步提高隧道磁阻的可能途径。(C)2011年美国物理研究所。[DOI：10.1063/1.3634026]
The tunneling magnetoresistance and perpendicular magnetic anisotropy in CoFeB(1.1-1.2 nm)/MgO/CoFeB(1.2-1.7 nm) junctions were found to be very sensitively dependent on annealing time. During annealing at a given temperature, decay of magnetoresistance occurs much earlier compared to junctions with in-plane magnetic anisotropy. Through a rapid thermal annealing study, the decrease of magnetoresistance is found to be associated with the degradation of perpendicular anisotropy, instead of impurity diffusion as observed in common in-plane junctions. The origin of the evolution of perpendicular anisotropy as well as possible means to further enhance tunneling magnetoresistance is discussed. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634026]