A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition
复制标题
DOI：
10.1063/1.5045058
复制
发表时间：
2018-09
影响因子：
3.2
通讯作者：
S. Washiyama;P. Reddy;F. Kaess;R. Kirste;S. Mita;R. Collazo;Z. Sitar
中科院分区：
文献类型：
--
作者：
S. Washiyama;P. Reddy;F. Kaess;R. Kirste;S. Mita;R. Collazo;Z. Sitar
建立了金属有机物化学气相沉积生长AlGaN的热力学过饱和模型，得到了实验上可获得的生长参数。导出的非线性关系使我们能够估计Ga和Al的过饱和度在AlGaN生长过程中给定的生长条件。计算表明，GaN相接近化学平衡，而Al过饱和度高达1010典型的生长条件。反应物种的过饱和度的这种差异在所得三元合金的生长的稳定性中起重要作用。结果表明，在低NH3流量/分压条件下，三甲基铝与NH3之间的寄生气相反应不明显，说明AlGaN的生长受到热力学限制。导出的非线性关系使我们能够估计Ga和Al的过饱和度在AlGaN生长过程中给定的生长条件。计算表明，GaN相接近化学平衡，而Al过饱和度高达1010典型的生长条件。反应物种的过饱和度的这种差异在所得三元合金的生长的稳定性中起重要作用。实验和模拟之间的协议表明，寄生的气相反应之间的三甲基铝和NH3在低NH3流速/分压是不显着的，表明，在这些条件下，AlGaN的生长是有限的。
A thermodynamic supersaturation model for growth of AlGaN by metalorganic chemical vapor deposition was developed for experimentally accessible growth parameters. The derived non-linear relationships enabled us to estimate Ga and Al supersaturation during AlGaN growth for given growth conditions. Calculations revealed that the GaN phase was close to chemical equilibrium, while the Al supersaturation was as high as 1010 for typical growth conditions. Such a disparity in the supersaturation of reaction species plays a significant role in the stability of the growth of the resulting ternary alloy. The agreement between experiment and simulation suggests that the parasitic gas phase reactions between trimethylaluminum and NH3 were not significant at low NH3 flow rates/partial pressures, indicating that, under these conditions, the AlGaN growth was thermodynamically limited.A thermodynamic supersaturation model for growth of AlGaN by metalorganic chemical vapor deposition was developed for experimentally accessible growth parameters. The derived non-linear relationships enabled us to estimate Ga and Al supersaturation during AlGaN growth for given growth conditions. Calculations revealed that the GaN phase was close to chemical equilibrium, while the Al supersaturation was as high as 1010 for typical growth conditions. Such a disparity in the supersaturation of reaction species plays a significant role in the stability of the growth of the resulting ternary alloy. The agreement between experiment and simulation suggests that the parasitic gas phase reactions between trimethylaluminum and NH3 were not significant at low NH3 flow rates/partial pressures, indicating that, under these conditions, the AlGaN growth was thermodynamically limited.