Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample
Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample
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DOI：
10.1063/1.4746250
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发表时间：
2012-08-20
影响因子：
4
通讯作者：
Gallagher, B. L.
中科院分区：
文献类型：
--
作者：
Casiraghi, A.;Rushforth, A. W.;Gallagher, B. L.
我们表明，在铁磁半导体（Ga，Mn）As的磁性能的有效电气控制是可能的，即使在高掺杂水平和高居里温度的限制，直接电动门控是不可能的，使用由压电致动器引起的应变。我们证明了非常大的和可逆的磁易轴旋转。我们比较从磁输运和超导量子干涉装置的磁力测量获得的结果，提取在这两种情况下的应变的压电诱导的单轴磁各向异性常数的依赖性，并详细说明在后者的方法中遇到的限制。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4746250]
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtained from magneto-transport and superconducting quantum interference device magnetometry measurements, extracting the dependence of the piezo-induced uniaxial magnetic anisotropy constant upon strain in both cases and detailing the limitations encountered in the latter approach. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746250]