Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation
Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation
复制标题
DOI：
10.1103/physrevb.79.235407
复制
发表时间：
2009-03
影响因子：
3.7
通讯作者：
S. Ono;H. Shima
中科院分区：
文献类型：
--
作者：
S. Ono;H. Shima
北海道大学工学研究生院应用物理系，札幌。 060-8628 日本电子邮件：shota-o@eng.hokudai.ac.jp电子邮件：shima@eng.hokudai.ac.jp摘要。从理论上考虑了波纹半导体薄膜的低温电阻率。纳米级波纹增强了电子-电子散射对电阻率的贡献，导致电阻率随着波纹幅度的增加而逐步发展。增强的电子散射归因于曲率引起的势能，该势能影响限制在弯曲薄膜上的电子的运动。详细讨论了逐步电阻率的几何条件和微观机制。
Department of Applied Physics, Graduate School of Engineering, HokkaidoUniversity, Sapporo. 060-8628 JapanE-mail: shota-o@eng.hokudai.ac.jpE-mail: shima@eng.hokudai.ac.jpAbstract. The low-temperature electrical resistivity of corrugated semiconductorfilms is theoretically considered. Nanoscale corrugation enhances the electron-electronscattering contribution to the resistivity, resulting in a stepwise resistivity developmentwith increasing corrugation amplitude. The enhanced electron scattering is attributedto the curvature-induced potential energy that affects the motion of electrons confinedto a thin curved film. Geometric conditions and microscopic mechanism of the stepwiseresistivity are discussed in detail.