Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 /spl mu/m
Mode characteristics of semiconductor equilateral triangle microcavities with side length of 5-20 /spl mu/m
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DOI：
10.1109/lpt.2003.821063
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发表时间：
2004-02
影响因子：
2.6
通讯作者：
Q. Lu;Xiao-hong Chen;W. Guo;Li-juan Yu;Yongzhen Huang;J. Wang;Yi Luo
中科院分区：
文献类型：
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作者：
Q. Lu;Xiao-hong Chen;W. Guo;Li-juan Yu;Yongzhen Huang;J. Wang;Yi Luo
采用两步电感耦合等离子体（ICP）刻蚀技术制备了边长为 5、10 和 20 /spl mu/m 的半导体等边三角形微谐振器（ETR）。通过使用 980 nm 半导体激光器泵浦源的光致发光 (PL) 实验研究了制造的 InGaAsP ETR 的模式特性，并在测量的 PL 光谱中观察到了不同的峰。不同峰值的波长间距与ETR中基本横模的理论纵模间隔非常吻合，这验证了不同峰值对应于谐振模式的增强。模式品质因数是根据 PL 光谱共振峰的宽度计算的，对于边长为 20 /spl mu/m 的 ETR 而言，该宽度约为 100。
Semiconductor equilateral triangle microresonators (ETRs) with side length of 5, 10, and 20 /spl mu/m are fabricated by the two-step inductively coupled plasma (ICP) etching technique. The mode properties of fabricated InGaAsP ETRs are investigated experimentally by photoluminescence (PL) with the pumping source of a 980-nm semiconductor laser and distinct peaks are observed in the measured PL spectra. The wavelength spacings of the distinct peaks agree very well with the theoretical longitudinal mode intervals of the fundamental transverse modes in the ETRs, which verifies that the distinct peaks are corresponding to the enhancement of resonant modes. The mode quality factors are calculated from the width of the resonant peaks of the PL spectra, which are about 100 for the ETR with side length of 20 /spl mu/m.