Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
Thickness scaling of space-charge-limited currents in organic layers with field- or density-dependent mobility
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DOI：
10.1002/pssa.200622248
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发表时间：
2006-12-01
影响因子：
2
通讯作者：
Garcia-Belmonte, Germa
中科院分区：
文献类型：
--
作者：
Bisquert, Juan;Montero, Jose M.;Garcia-Belmonte, Germa
本文给出了迁移率为μ（E）= μ（0）exp（gamma root E）的有机层中单个载流子的空间电荷限制输运的电流密度-电压（J-V）特性的精确解。场相关迁移率的一般标度关系以变量JL和V/L的形式出现。对于在有机场效应晶体管测量中发现的迁移率的密度依赖性，根据不同的变量J（1/B）L和V/L发生厚度缩放。建议的缩放是一个有用的测试区分场和载流子密度依赖于无序有机半导体的迁移率。(c)2006 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆。
An exact solution is provided for the current density-voltage (J-V) characteristics of space-charge limited transport of a single carrier in organic layers with field-dependent mobility of the type mu(E) = mu(0) exp (gamma root E). The general scaling relationship for field-dependent mobility occurs in terms of the variables JL and V/L. For the density-dependence of the mobility found in organic field-effect transistor measurements, the thickness scaling occurs in terms of different variables, J(1/B)L and V/L. The proposed scaling is a useful test for distinguishing field- and carrier density-dependent mobility in disordered organic semiconductors. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.