Design of thermally stable insulation film by radical grafting poly (methylacrylic acid) on silicon surface
Design of thermally stable insulation film by radical grafting poly (methylacrylic acid) on silicon surface
复制标题
硅表面自由基接枝聚甲基丙烯酸热稳定绝缘薄膜的设计
DOI：
10.1016/j.apsusc.2018.09.039
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发表时间：
2019-01-15
影响因子：
6.7
通讯作者：
Li, Ming
中科院分区：
文献类型：
--
作者：
Liu, Yang;Dong, Mengya;Li, Ming
聚合物对硅表面的改性在微电子绝缘膜方面具有重要的应用价值。必要的是，聚合物膜应该是热稳定的，以承受包装过程中的温度。在此，我们报告了热处理自由基接枝聚（甲基丙烯酸）（PMAA）膜的芳香酰胺环的热稳定结构。引发剂4-硝基苯重氮四氟硼酸盐（NBD）可以在聚合物膜中提供-NH 2基团（被-NO2基团还原）。脱水反应发生在-COOH基团（来自PMAA）和-NH 2基团之间，温度为200 ℃。产物为分子内或分子间苯环上的酰胺环，润湿性由亲水性变为疏水性。这种新结构在热处理后显示出优异的热稳定性，耐热指数可达226.6 ℃。此外，该聚合物薄膜显示出与SiO2相似的介电性能，可用作微电子或半导体工业中的精细绝缘膜。
The surface modification of silicon (Si) by polymer has great values for insulation film in microelectronics. Necessarily, the polymer film should be thermally stable to withstand the temperature in packaging process. Herein, we report a thermally stable structure of aromatic amide rings by heat treating the radical grafted poly (methylacrylic acid) (PMAA) film. The initiator, 4-Nitrobenzene diazonium tetrafluoroborate (NBD), can provide -NH2 groups (reduced by -NO2 groups) in the polymer film. Dehydration reaction happens between -COOH groups (from PMAA) and -NH2 groups at 200 degrees C. The products are intramolecular or intermolecular amide rings on benzene ring, with the wettability changing from hydrophilic to hydrophobic. The new structure shows excellent thermal stability after heat treating and the heat-resisting index can be up to 226.6 degrees C. In addition, the polymer film shows the similar dielectric properties with SiO2 that could be used as a refined insulation film in microelectronics or semiconductor industry.