A Novel Plasma-Based Copper Dry Etching Method
A Novel Plasma-Based Copper Dry Etching Method
复制标题
一种新型等离子体干法蚀刻方法
DOI：
10.1143/jjap.39.l188
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
Sangheon Lee
中科院分区：
文献类型：
--
作者：
Y. Kuo;Sangheon Lee
发现并研究了一种新的铜干法刻蚀方法。该工艺基于一种独特的盐酸等离子体-铜反应，该反应形成一种可溶于溶液的氯化铜化合物。描述了固态氯化铜生长机制的物理(例如，形态、轮廓、体积膨胀和各向异性)和化学(例如，反应机理)方面。这一新工艺适用于先进的微电子和光电子器件和电路的铜互连技术。
A new copper dry etching method has been discovered and studied. The process is based on an unique HCl plasma-copper reaction that forms a solution soluble copper chloride compound. The physical (e.g., morphology, profile, volume expansion, and anisotropy) and chemical (e.g., reaction mechanism) aspects of the solid-state copper chloride growth mechanism have been delineated. This new process is applicable to the copper interconnection technology for advanced microelectronic and optoelectronic devices and circuits.