Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics
Design and control of Ge-based metal-oxide-semiconductor interfaces for high-mobility field-effect transistors with ultrathin oxynitride gate dielectrics
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DOI：
10.1063/1.4813829
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发表时间：
2013-07
影响因子：
4
通讯作者：
Y. Minoura;A. Kasuya;T. Hosoi;T. Shimura;Heiji Watanabe
中科院分区：
文献类型：
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作者：
Y. Minoura;A. Kasuya;T. Hosoi;T. Shimura;Heiji Watanabe
使用超薄氮氧化物 (GeON) 栅极电介质实现了高质量的 Ge 基金属氧化物半导体 (MOS) 堆栈。事实证明，基于氧化锗 (GeO2) 表面等离子体氮化和随后的金属电极沉积的原位工艺可有效抑制金属/绝缘体界面反应引起的电劣化。通过低温氧化形成基础GeO2和基础氧化物等离子体氮化后的高温原位真空退火，进一步改善了底部GeON/Ge界面的电性能。基于优化的原位栅极堆叠制造工艺，具有 Al/GeON/Ge 栅极堆叠的 p 沟道和 n 沟道 Ge MOSFET 在等效氧化物厚度缩小至 1.4 nm 时具有非常高的反型载流子迁移率（μ孔：445 cm2/Vs，μ电子：1114 cm2/Vs）。
High-quality Ge-based metal-oxide-semiconductor (MOS) stacks were achieved with ultrathin oxynitride (GeON) gate dielectrics. An in situ process based on plasma nitridation of the base germanium oxide (GeO2) surface and subsequent metal electrode deposition was proven to be effective for suppressing electrical deterioration induced by the reaction at the metal/insulator interface. The electrical properties of the bottom GeON/Ge interface were further improved by both low-temperature oxidation for base GeO2 formation and high-temperature in situ vacuum annealing after plasma nitridation of the base oxide. Based on the optimized in situ gate stack fabrication process, very high inversion carrier mobility (μhole: 445 cm2/Vs, μelectron: 1114 cm2/Vs) was demonstrated for p- and n-channel Ge MOSFETs with Al/GeON/Ge gate stacks at scaled equivalent oxide thickness down to 1.4 nm.