Complementary frequency selective surfaces
Complementary frequency selective surfaces
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DOI：
10.1049/ip-map:20000799
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发表时间：
2000-12
期刊：
影响因子：
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通讯作者：
D. S. Lockyer;J. Vardaxoglou;R. Simpkin
中科院分区：
文献类型：
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作者：
D. S. Lockyer;J. Vardaxoglou;R. Simpkin
介绍了一种频率选择表面（FSS）技术的概念，它源于Babinet的原理，即在介质基片的两侧蚀刻一层导电元件和一层孔径元件，即两个紧密耦合的FSS的混合体，简称互补FSS（CFSS）。有两个狭窄的通带，由一个明显的零点分隔开。CFSS从物理上小的元件创建电学上大的元件，达到这样的程度，即在较低通带谐振频率下的自由空间中的常规的/sp1 λ//2谐振器将比CFSS中采用的偶极子长度长三倍以上。该通带对于法向和斜向TE和TM入射高度稳定，频率偏移小于2%。建立了全波模态分析方法，导出了电场积分方程和磁场积分方程。这些IE是耦合的，这使得它们适合于CFSS问题的解决方案。层间电介质区域对于通带的位置以及带内损耗至关重要。偶极和环CFSS的结果，并与实测数据高达40 GHz。
A concept in frequency selective surface (FSS) technology that stems from Babinet's principle, whereby a hybrid of two closely coupled FSS, a layer of conducting elements and a layer of aperture elements are etched either side of a dielectric substrate, acronymed as complementary FSS (CFSS) is introduced. There are two narrow passbands separated by a distinct null. The CFSS creates electrically large elements from physically small ones to such an extent that a conventional /spl lambda//2 resonator in free space at the lower passband resonant frequency would be over three times longer than the dipole length employed in the CFSS. This passband is highly stable for normal and oblique TE and TM incidences, with less than 2% frequency shift. A full wave modal analysis is developed and two integral equations (IEs), an electric field IE and a magnetic field IE, are derived. These IEs are coupled and this renders them suitable for the solution of the CFSS problem. The interlayer dielectric region is critical to the location of the passbands as well as the in-band loss. Results are presented for dipole and ring CFSS and compared with measured data up to 40 GHz.