Quantifying Surface Recombination—Improvements in Determination and Simulation of the Surface Recombination Parameter J0s
Quantifying Surface Recombination—Improvements in Determination and Simulation of the Surface Recombination Parameter J0s
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量化表面复合——表面复合参数 J0s 的确定和模拟的改进
DOI：
10.1109/jphotov.2023.3265859
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发表时间：
2023
影响因子：
3
通讯作者：
M. Schubert
中科院分区：
文献类型：
--
作者：
B. Hammann;B. Steinhauser;A. Fell;R. Post;T. Niewelt;W. Kwapil;A. Wolf;A. Richter;H. Höffler;M. Schubert
复合参数<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>是表征表面复合的重要尺度.为了计算它，必须应用许多方法和模型。由于晶体硅中俄歇和辐射复合的模型最近被修订，因此研究这些变化对<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>的影响是很重要的。详细描述了从有效寿命测量和模拟中获得<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>的起源和可能的方法，包括拟合全寿命曲线的可能性和一种基于过量载流子密度Δ<italic>n</italic>重新参数化的新方法。使用有效寿命的测量，我们发现，<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>值确定与较旧的参数化由Richter等人。将导致错误的值高达5 fA/cm<sup>2</sup>，这取决于所选择的条件。通过模拟近表面、高掺杂结构（如发射极）中的复合参数<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>，表明这些误差甚至可以达到50%。如果在模拟中使用，我们强调的重要性，表面复合的参数化与相应的参数化的内在复合确定。因此，在氧化物钝化和磷掺杂表面的复合的更新，可以使用新的本征复合模型。最后，我们给出了一些最佳实践的例子，最近的有效寿命测量的改进如何影响<italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>值以及可能的陷阱。
The recombination parameter <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic> provides an important metric to characterize surface recombination. For its calculation, numerous methods and models have to be applied. Since the models for the Auger and radiative recombination in crystalline silicon were recently revised, it is important to investigate the influence of these changes on <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic>. The origin and possible ways of obtaining <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic> from effective lifetime measurements as well as simulations are described in detail, including the potential to fit the full lifetime curve and a new approach that is based upon the reparameterization of the excess charge carrier density Δ<italic>n</italic>. Using the effective lifetime measurements, we find that <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic> values determined with the older parameterization by Richter et al. will result in erroneous values up to 5 fA/cm<sup>2</sup>, depending on the chosen conditions. By simulating the recombination parameter <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic> in near surface, highly doped structures, such as emitters, it is shown that these errors can even go up to 50%. If used in a simulation, we highlight the importance of having the parameterizations of surface recombination being determined with the corresponding parameterization of intrinsic recombination. Therefore, an update for the recombination at oxide-passivated and phosphorous doped surfaces is given that can be used with the new intrinsic recombination models. Finally, we give some best-practice examples on how recent improvements in effective lifetime measurements affect <italic>J</italic><sub>0</sub><italic><sub>s</sub></italic> values as well as possible pitfalls.