Thermally assisted magnetization reversal in submicron-sized magnetic thin films
Thermally assisted magnetization reversal in submicron-sized magnetic thin films
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DOI：
10.1103/physrevlett.84.5419
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发表时间：
2000-06
影响因子：
8.6
通讯作者：
R. Koch;G. Grinstein;G. Keefe;Yu Lu;P. Trouilloud;W. Gallagher;S. Parkin
中科院分区：
文献类型：
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作者：
R. Koch;G. Grinstein;G. Keefe;Yu Lu;P. Trouilloud;W. Gallagher;S. Parkin
我们已经测量了亚微米尺寸的磁性薄膜的热辅助磁化反转率。对于刚好小于零温度开关场H（C）的场H，反转概率P（exp）（s）（t）在短时间t内增加，达到最大值，然后按指数规律减小。微磁模拟表现出相同的行为，并表明，通过湮灭的两个畴壁，从样品的相对侧移动的反转进行。P（exp）（s）（t）的行为可以通过简单的热活化“能量阶梯”模型来理解。
We have measured the rate of thermally assisted magnetization reversal of submicron-sized magnetic thin films. For fields H just less than the zero-temperature switching field H(C), the probability of reversal, P(exp)(s)(t), increases for short times t, achieves a maximum value, and then decreases exponentially. Micromagnetic simulations exhibit the same behavior and show that the reversal proceeds through the annihilation of two domain walls that move from opposite sides of the sample. The behavior of P(exp)(s)(t) can be understood through a simple "energy-ladder" model of thermal activation.