Investigation of GaN-HEMT Based Switches for Hybrid Switching Amplifier Supply-Modulators
Investigation of GaN-HEMT Based Switches
for Hybrid Switching Amplifier Supply-Modulators
复制标题
用于混合开关放大器电源调制器的基于 GaN-HEMT 的开关研究
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
W. Heinrich
中科院分区：
文献类型：
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作者：
R. Perea;Martin Krellmann;O. Bengtsson;P. Landin;W. Heinrich
摘要研究了用于射频功率放大器宽带电源调制的混合开关放大器（HSA）中基于GaN-HEMT的开关级。HSA设计用于最大15 V电源电压、1 A电源电流和10 MHz带宽。GaN-HEMT开关设计与替代栅极驱动电路的研究方面的功率，效率和线性度，在不同的负载条件下，使用模拟和测量的制造电路。完整的HSA显示WCDMA包络的效率为49.7%。在15 V降压转换器测试电路中，采用改进的栅极驱动电路改进的开关级在1 MHz、15 Ω负载下实现10 V转换时，效率达到85%。
Abstract An investigation of GaN-HEMT based switching stages in hybrid switching amplifiers (HSA) for wide-bandwidth supply modulation of RF power amplifiers is presented. The HSA is designed for maximum 15 V supply voltage, 1 A supply current and 10 MHz bandwidth. GaN-HEMT switch designs with alternative gate drive circuitry are investigated with regard to power, efficiency and linearity under different load conditions using simulations and measurements of the fabricated circuits. The full HSA showed an efficiency of 49.7% for a WCDMA envelope. A modified switching stage with improved gate-drive circuitry shows 85% efficiency in a 15 V buck-converter test-circuit for a 10 V conversion at 1 MHz over a 15 Ω load.