A Host-Guest Electron Transfer Mechanism for Magnetic and Electronic Modifications in a Redox‐Active Metal-Organic Framework
A Host-Guest Electron Transfer Mechanism for Magnetic and Electronic Modifications in a Redox‐Active Metal-Organic Framework
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氧化还原活性金属有机框架中磁性和电子修饰的主客体电子转移机制
DOI:
10.1002/anie.202115976
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发表时间:
2022
期刊:
影响因子:
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通讯作者:
Miyasaka Hitoshi
中科院分区:
文献类型:
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作者:
Zhang Jun;Kosaka Wataru;Kitagawa Yasutaka;Miyasaka Hitoshi
Host–guest electron transfer (HGET) in molecular framework systems is a critical trigger for drastic functional changes in both host framework and guest. A reversible magnetic phase transition was achieved via HGET in a layered framework, [{Ru2(2,6‐F2PhCO2)4}2(BTDA‐TCNQ)] (1), where 2,6‐F2PhCO2−and BTDA‐TCNQ represent 2,6‐difluorobenzoate and bis[1,2,5]dithiazolotetracyanoquinodimethane, respectively. The guest‐free1with an antiferromagnetic ground state transformed into a paramagnet, [{Ru2(2,6‐F2PhCO2)4}2(BTDA‐TCNQ)]I3(1‐I3), by adsorbing iodine (I2). The local charge distribution of [{Ru2II,III}+‐(BTDA‐TCNQ).−‐{Ru2II,II}] in1was reversibly modified to [{Ru2II,III}+‐(BTDA‐TCNQ)0‐{Ru2II,II}](I3−) in1‐I3through HGET. Theoretical calculations of1‐I3indicated a partial charge delocalization as [{Ru2}(1−δ)+‐(BTDA‐TCNQ)0‐{Ru2}δ+](I3−) withδ≈0.2, aided by weak ferromagnetic coupling.1‐I3exhibited a hundred‐fold enhancement in electrical conductivity compared to that of1.