The improved oxidation resistance of Si-doped SmCo7 nanocrystalline magnet
The improved oxidation resistance of Si-doped SmCo7 nanocrystalline magnet
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DOI：
10.1063/1.3602321
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发表时间：
2011-06
影响因子：
4
通讯作者：
Lili Liu;Chengbao Jiang
中科院分区：
文献类型：
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作者：
Lili Liu;Chengbao Jiang
通过在 500 °C 下对硅进行合金化，SmCo7 纳米晶磁体的抗氧化性得到了显着提高。 SmCo6.1Si0.9纳米晶磁体在500℃氧化500h后最大磁能积(BH)max损失约为5.6%，明显小于SmCo7纳米晶磁体的52.1%。提出了一种通用模式来预测 (BH)max 损失作为 500 °C 氧化时间的函数。内氧化层中SiO2氧化物的形成对于降低氧化速率和氧扩散系数具有重要作用，从而导致SmCo6.1Si0.9纳米晶磁体固有抗氧化能力的增强。
A drastic improvement in oxidation resistance of SmCo7 nanocrystalline magnet was achieved by alloying silicon at 500 °C. The maximum energy product (BH)max loss of SmCo6.1Si0.9 nanocrystalline magnet was about 5.6% after oxidation at 500 °C for 500 h, which was significantly less than 52.1% of SmCo7 nanocrystalline magnet. A general mode was proposed to predict the (BH)max loss as a function of oxidation time at 500 °C. The formation of SiO2 oxide in the internal oxidation layer plays an important role in reducing the oxidation rate and oxygen diffusion coefficient, which leads to the enhancement of inherent oxidation resistance of SmCo6.1Si0.9 nanocrystalline magnet.