Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices
Power Cycling Capability and Lifetime Estimation of Discrete Silicon Carbide Power Devices
复制标题
分立碳化硅功率器件的功率循环能力和寿命估计
DOI：
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
N. Kaminski
中科院分区：
文献类型：
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作者：
F. Hoffmann;N. Kaminski
在这项工作中，研究了功率半导体的三种最常见的寿命模型（即LESIT、CIPS 08和SKiM 63）对SiC功率器件的适用性。因此，对大量器械进行了多次功率循环测试。结果表明，只要适当调整模型参数，这些模型能够较好地反映SiC功率半导体器件在较大温度波动下的功率循环试验结果。然而，它们在较低的温度波动下显示出显著的误差，并且大大低估了寿命。这表明，SiC功率器件在高温波动下的功率循环性能比硅差，但这并不一定意味着其使用寿命受到相同数量级的影响。
In this work, the three most common lifetime models for power semiconductors i.e. LESIT, CIPS08 and SKiM63 are investigated regarding their applicability for SiC power devices. For this reason, multiple power cycling tests with a large number of devices were performed. The results show that those models can properly reflect the power cycling test results of SiC power semiconductors for higher temperature swings if the model parameter are properly adjusted. However, they show a significant error for lower temperature swings and drastically underestimate the lifetime. This indicates that the inferior power cycling performance of SiC power devices compared to silicon at high temperature swings does not necessarily imply that the service life is affected in the same order of magnitude.