Analytic Model of Specific ON-State Resistance for Superjunction MOSFETs With an Oxide Pillar
Analytic Model of Specific ON-State Resistance for Superjunction MOSFETs With an Oxide Pillar
复制标题
DOI：
10.1109/led.2019.2906559
复制
发表时间：
2019-03
影响因子：
4.9
通讯作者：
H. Kang;F. Udrea
中科院分区：
文献类型：
--
作者：
H. Kang;F. Udrea
提出了一种在n-柱和p-柱之间具有氧化物柱的超结MOSFET的解析模型。由于氧化物的低介电常数，在氧化物上维持高电场。这减小了n柱内的寄生耗尽宽度，从而改善了电流传导路径。这种结构的优点在单元间距缩小和枕形物变得更窄时特别明显。氧化物柱的使用导致在特定的导通状态电阻减少30%时，相比传统的SJ为2- $\mu \text{m}$单元间距。分析模型与仿真结果吻合较好。
An analytical model for superjunction (SJ) MOSFETs having an oxide pillar between the n-pillar and the p-pillar is developed. Owing to the low permittivity of the oxide, a high electric field is sustained across the oxide. This reduces the parasitic depletion width within the n-pillar, thus improving the current conducting path. The advantage of this structure is particularly visible as the cell pitch is scaled down and the pillows become narrower. The use of an oxide pillar leads to 30% reduction in the specific ON-state resistance when compared to a conventional SJ for a 2- $\mu \text{m}$ cell pitch. The analytical model shows a good agreement with the simulation results.