Structure and Electrical Properties of (Pr, Mn)-Codoped BiFeO3/B-Doped Diamond Layered Structure
Structure and Electrical Properties of (Pr, Mn)-Codoped BiFeO3/B-Doped Diamond Layered Structure
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DOI：
10.1149/1.3568838
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发表时间：
2011-06
影响因子：
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通讯作者：
T. Kawae;Y. Hori;T. Nakajima;H. Kawasaki;N. Tokuda;S. Okamura;Y. Takano;A. Morimoto
中科院分区：
文献类型：
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作者：
T. Kawae;Y. Hori;T. Nakajima;H. Kawasaki;N. Tokuda;S. Okamura;Y. Takano;A. Morimoto
作为无铅铁电体与宽间隙半导体的集成，在金刚石衬底上制备了（Pr, Mn）共掺杂bifeo3 (BPFM)/掺杂b的金刚石层状结构。采用微波等离子体增强化学气相沉积技术，在（100）金刚石衬底上均匀外延生长掺杂b的金刚石薄膜。然后用脉冲激光沉积法在b掺杂金刚石层上沉积BPFM薄膜。BPFM薄膜是在掺杂b的金刚石层上具有随机取向的多晶薄膜。制备的异质结构在室温下呈现饱和的P-E迟滞曲线。最大电场为1000 kV/cm时，残余极化和矫顽力场分别为60 μC/cm 2和480 kV/cm。
As an integration of Pb-free ferroelectrics with wide-gap semiconductors,(Pr, Mn)-codoped BiFeO 3 (BPFM)/B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kV/cm were 60 μC/cm 2 and 480 kV/cm, respectively.