Interfacial Structure Studies of Gold‐Tin‐Aluminum Metallizations on GaAlAs
Interfacial Structure Studies of Gold‐Tin‐Aluminum Metallizations on GaAlAs
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GaAlAs 上金锡铝金属化的界面结构研究
DOI：
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发表时间：
1981
期刊：
影响因子：
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通讯作者：
R. McCoy
中科院分区：
文献类型：
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作者：
S. Nakahara;R. McCoy
使用透射电子显微镜（TEM）来研究在Au-Sn-Al金属化之间和在发光二极管（LED）的制造期间发生的不稳定的粘附问题的原因。横截面研究表明，金属化层实际上通过复杂的空隙结构与大部分表面分离。因此，这种界面空隙的存在是粘附性差的潜在来源。以前的TEM研究表明，空洞结构实际上包括两个突出的特点：孤立的半球形孔和几乎连续的界面裂纹。在这项工作中，Sn-Au互扩散机制提出了解释的起源和复杂的空隙结构的性质。Sn向Au的快速晶界扩散和Au向Sn的快速体扩散被用来描述所观察到的孔的起源。另一方面，界面裂纹的发生归因于相互扩散引起的高拉伸应力，其导致金属化层与衬底分离。的Sn和Au层的微观结构被证明是重要的，在确定可能形成这样的空隙。
A transmission electron microscope (TEM) was used to study the cause for an erratic adhesion problem which occurred between Au‐Sn‐Al metallizations and during the fabrication of light emitting diodes (LED's). A cross‐section study revealed that the metallization layer was actually separated from much of the surface by a complex void structure. The presence of such an interfacial void is thus a potential source for poor adhesion. Previous TEM studies have shown that the void structure in fact consists of two prominent features: isolated hemispherical pores and an almost continuous interfacial crack. In this work, Sn‐Au interdiffusion mechanisms are proposed to explain the origin and nature of the complex void structure. Rapid grain boundary diffusion of Sn into Au and rapid bulk diffusion of Au into Sn are used to describe the origin of the observed pores. On the other hand, the occurrence of the interfacial crack is attributed to interdiffusion‐induced high tensile stresses whch cause the separation of the metallization layer from the substrate. The microstructure of the Sn and Au layers is shown to be important in determining the possible formation of such a void.