Efficient carrier multiplication in InP nanoparticles
Efficient carrier multiplication in InP nanoparticles
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InP 纳米颗粒中的高效载流子倍增
DOI：
10.1103/physrevb.81.081303
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发表时间：
2010
影响因子：
3.7
通讯作者：
Stubbs S
中科院分区：
文献类型：
--
作者：
Stubbs S
报道了InP纳米颗粒中有效的载流子倍增;在能带边缘的超快瞬态吸收测量被用来确定每个光激发纳米颗粒的激子数量，用于激发注量和光子能量的范围。在光子能量大于倍的带隙，平均超过1个激子每个光激发的纳米粒子被发现，即使在极限的消失通量。由吸收的光子产生的激子的平均数被测量为具有能量为带隙的2.6倍的激发光子。
Efficient carrier multiplication in InP nanoparticles is reported; ultrafast transient absorption measurements at the band edge were used to determine the number of excitons per photoexcited nanoparticle for a range of both excitation fluences and photon energies. At photon energies greater thantimes the band gap, an average of more than 1 exciton per photoexcited nanoparticle was found even in the limit of vanishing fluence. The average number of excitons generated by an absorbed photon was measured to befor excitation photons with energies 2.6 times the band gap.