Elastic modulus of amorphous SiO2 nanowires - art. no. 043108
Elastic modulus of amorphous SiO2 nanowires - art. no. 043108
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DOI：
10.1063/1.2165275
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发表时间：
2006-01-23
影响因子：
4
通讯作者：
Gao, HS
中科院分区：
文献类型：
--
作者：
Ni, H;Li, XD;Gao, HS
采用化学气相沉积（CVD）法在常压氩气气氛下合成了直径为50 ~ 100 nm的非晶SiO2纳米线。使用原子力显微镜（AFM）直接对单个无定形SiO2纳米线进行纳米级三点弯曲测试。无定形SiO2纳米线的弹性模量被测量为76.6 +/- 7.2 GPa，这是接近报告的散装SiO2和热生长SiO2薄膜的值，但低于等离子体增强CVD SiO2薄膜。非晶SiO2纳米线在弯曲时表现出脆性断裂失效。
Amorphous SiO2 nanowires with diameter ranging from 50 to 100 nm were synthesized using chemical vapor deposition (CVD) under an argon atmosphere at atmospheric pressure. Nanoscale three-point bending tests were performed directly on individual amorphous SiO2 nanowires using an atomic force microscope (AFM). Elastic modulus of the amorphous SiO2 nanowires was measured to be 76.6 +/- 7.2 GPa, which is close to the reported value of the bulk SiO2 and thermally grown SiO2 thin films, but lower than that of plasma-enhanced CVD SiO2 thin films. The amorphous SiO2 nanowires exhibit brittle fracture failure in bending.