Control of Supercurrent in Hybrid Superconducting–Ferromagnetic Transistors
Control of Supercurrent in Hybrid Superconducting–Ferromagnetic Transistors
复制标题
混合超导铁磁晶体管中的超电流控制
DOI：
10.1109/tasc.2015.2390143
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发表时间：
2015
影响因子：
1.8
通讯作者：
J. Ketterson
中科院分区：
文献类型：
--
作者：
I. Nevirkovets;O. Chernyashevskyy;G. Prokopenko;O. Mukhanov;J. Ketterson
我们报告了 SFIFS 结以及多端 SFIFSIS 和 SISFIS 器件特性的实验结果（其中 S、I 和 F 分别表示超导体 (Nb)、绝缘体 (AlOx) 和铁磁材料 (Ni)）。 SFIFS (SFIS) 结充当 SFIFSIS (SISFIS) 器件中的注入器，具有类似晶体管的特性；因此，我们称它们为超导铁磁晶体管。我们找到了 SFIFS 电流-电压特性变为线性的 F (Ni) 厚度。对于三端SFIFSIS器件，我们重点研究了通过SFIFS结的注入电流对SIS受体最大约瑟夫森电流的影响。对于四端 SISFIS 器件，我们研究了通过中间 Nb 电极的传输电流对通过 SFIS 结的注入电流水平的依赖性。在这两种情况下，我们发现输出超导电流（约瑟夫森电流或输运电流）可以通过从 SFIFS 或 SFIS 输入结注入的准粒子进行有效调制。实验表明，在优化器件参数后，它们可以用作存储器、数字和射频应用的输入/输出隔离器和放大器。
We report experimental results on characteristics of SFIFS junctions and multiterminal SFIFSIS and SISFIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlOx), and a ferromagnetic material (Ni), respectively). The SFIFS (SFIS) junctions serve as injectors in the SFIFSIS (SISFIS) devices, which have transistorlike properties; for this reason, we call them superconducting-ferromagnetic transistors. We have found the F (Ni) thickness at which the SFIFS current-voltage characteristic becomes linear. For three-terminal SFIFSIS devices, we focused on studying the influence of the injection current through the SFIFS junction on the maximum Josephson current of the SIS acceptor. For four-terminal SISFIS devices, we studied dependence of the transport current through the middle Nb electrode on injection current level through the SFIS junction. In both cases, we found that the output superconducting current (either Josephson or transport) can be efficiently modulated by the quasiparticle injection from SFIFS or SFIS input junction. The experiments indicate that, after optimization of the device parameters, they can be used as input/output isolators and amplifiers for memory, digital, and RF applications.