Crossover from Kondo semiconductor to metallic antiferromagnet with 5d-electron doping in CeFe2Al10
Crossover from Kondo semiconductor to metallic antiferromagnet with 5d-electron doping in CeFe2Al10
复制标题
从近藤半导体到 CeFe2Al10 中 5d 电子掺杂的金属反铁磁体的交叉
DOI:
10.1103/physrevb.104.144405
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发表时间:
2021
期刊:
影响因子:
--
通讯作者:
T. Takabatake
中科院分区:
文献类型:
--
作者:
R. Tripathi;D. T. Adroja;M. R. Lees;A. Sundaresan;S. Langridge;A. Bhattacharyya;V. K. Anand;D.D. Khalyavin;J. Sannigrahi;G. Cibin;A. D. Hiller;R. I. Smith;H. C. Walker;Y. Muro;T. Takabatake
We report a systematic study of the-electron-doped system. With increasing, the orthorhombicaxis decreases slightly while accompanying changes inandleave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor, the low-temperature energy gap, which is proposed to be a consequence of stronghybridization, is suppressed by a small amount of Ir substitution for Fe and that the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The charge or transport gap collapses (at) faster than the spin gap with Ir substitution. Magnetic susceptibility, heat capacity, and muon spin relaxation measurements demonstrate that the system undergoes long-range antiferromagnetic order below a Néel temperatureof 3.1(2) K for. The ordered moment is estimated to be smaller than 0.07(1)/Ce, although the trivalent state of Ce is confirmed by Ce-edge x-ray absorption near edge spectroscopy. It is suggested that thehybridization gap, which plays an important role in the unusually high ordering temperatures observed in(= Ru and Os), may not be necessary for the onset of magnetic order with a lowseen here in.