Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
复制标题
DOI：
10.1063/1.3306736
复制
发表时间：
2010-02
影响因子：
4
通讯作者：
Shaoqiang Chen;A. Uedono;S. Ishibashi;S. Tomita;H. Kudo;K. Akimoto
中科院分区：
文献类型：
--
作者：
Shaoqiang Chen;A. Uedono;S. Ishibashi;S. Tomita;H. Kudo;K. Akimoto
通过气源分子束外延制备了不同V/III比的掺铒GaN样品，研究了V/III比对铒相关发光中心缺陷形成和光学活性的影响。在光致发光测量中观察到明显的V/III比值依赖性。正电子湮没光谱测量表明，在这些样品中形成了VGa-VN空位配合物，并且VN/VGa比取决于V/III比。在较低的V/III比下生长的掺铒氮化镓的光学性能得到了改善，其产生的Er-VN缺陷配合物作为高光活性发光中心。
Erbium-doped GaN samples grown with different V/III ratios through gas source molecular beam epitaxy were prepared to investigate the influence of the V/III ratio on the defect formation and the optical activity of the Er-related luminescence center. Obvious V/III ratio dependence was observed in photoluminescence measurement. Positron annihilation spectroscopy measurements suggested that VGa-VN vacancy-complexes formed in these samples and that the VN/VGa ratio depended on the V/III ratio. The generation of Er-VN defect complexes, which act as high optical active luminescence centers, is suggested as the cause of improved optical properties of Er-doped GaN grown with a lower V/III ratio.