Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications
Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications
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DOI：
10.1143/jjap.44.5918
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发表时间：
2005-08
影响因子：
1.5
通讯作者：
A. Ishida;K. Matsue;Y. Inoue;H. Fujiyasu;H. Ko;A. Setiawan;Jungjin Kim;H. Makino;T. Yao
中科院分区：
文献类型：
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作者：
A. Ishida;K. Matsue;Y. Inoue;H. Fujiyasu;H. Ko;A. Setiawan;Jungjin Kim;H. Makino;T. Yao
采用包络函数框架计算了应用于量子级联激光器的AlN/GaN量子阱的导带结构。我们考虑了氮化物量子阱中的压电场和自发极化场。如果利用偏振场效应，AlN/GaN系统中的量子级联结构的设计将变得简单得多。采用热壁外延技术制备了用于中红外量子级联激光器的[(AlN)1/(GaN)N1]m/(AlN)N_2量子阱，并对其进行了X射线衍射和透射电子显微镜测试。量子阱的X射线衍射测量结果与理论模型吻合较好，并通过X射线互易映射确定了量子阱在GaN缓冲层上的相干生长。用透射电子显微镜观察到了AlN单层原子层的存在。
An envelope function framework was used to calculate the conduction band structure of AlN/GaN quantum wells for application to quantum cascade lasers. We took into account the piezo- and spontaneous polarization fields in the nitride quantum wells. The design of the quantum cascade structures in the AlN/GaN system becomes much simpler if we utilize the effect of polarization fields. [(AlN)1/(GaN)n1]m/(AlN)n2 quantum wells were prepared using hot-wall epitaxy for mid-infrared quantum cascade laser applications, and X-ray diffraction and transmission electron microscopy (TEM) measurements were performed on them. The X-ray diffraction measurements of the quantum wells were in good agreement with the theoretical pattern, and the coherent growth of quantum wells on the GaN buffer layers was ascertained by X-ray reciprocal mapping. The existence of a single atomic layer of AlN was observed by TEM measurements.