Response Properties of Silicon Trench Photodiodes to Single α- and γ-Ray in Pulse Mode
Response Properties of Silicon Trench Photodiodes to Single α- and γ-Ray in Pulse Mode
复制标题
硅沟槽光电二极管在脉冲模式下对单α射线和γ射线的响应特性
DOI：
10.1109/access.2022.3177624
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发表时间：
2022
期刊：
影响因子：
3.9
通讯作者：
Ariyoshi Tetsuya
中科院分区：
文献类型：
--
作者：
Toru Mizuki;Rikako Saito;Keisuke Hirata;Sheikh Mohamed Mohamed;Yoshikata Nakajima;Toru Maekawa;Ariyoshi Tetsuya
本研究提出了一种用于光子计数计算机层析成像(CT)的新型硅X射线传感器结构，这是一种新一代的低剂量X射线成像技术。传感器材料采用低成本、可加工性好、反向偏置电压低达几十伏、具有电荷传输特性的硅。采用硅槽光电二极管和水平X射线辐照的方法，可以获得光子计数CT所要求的性能，信号响应时间小于100 ns，曝光剂量比常规CT低两个数量级，而且成本低，器件寿命长，可靠性高。制作了该传感器，并用4.2 MeV单射线和60keV单射线光子对传感器的光子计数效率进行了评估。在20V的低偏置电压下获得了由射线和射线产生的脉冲高度谱，首次观察到了单个辐射探测脉冲，并用硅槽光电二极管获得了脉冲高度谱。此外，用60keV的射线估算了与信号电荷收集时间成正比的射线计数率、探测效率和脉冲上升时间。
This study proposes a new silicon X-ray sensor structure for photon-counting computed tomography (CT), which is a next-generation low-dose X-ray imaging technique. Silicon, which is inexpensive and has excellent processability and a lower reverse bias voltage of several tens of volts, as well as charge transport properties, is used as the sensor material. Using silicon trench photodiodes and horizontal X-ray irradiation method, we can achieve the performance required for photon-counting CT, including a signal response time of less than 100 ns and an exposure dose two orders of magnitude lower than that of conventional CT at a low cost, long device lifetime, and high reliability. The proposed sensor was fabricated, and its photon-counting effectiveness was estimated using 4.2 MeV single-ray and 60 keV single-ray photon. The pulse height spectra derived from the-rays and-rays were obtained with a low bias voltage of 20 V. For the first time, a single radiation detection pulse was observed, and the pulse height spectra were obtained using silicon trench photodiodes. Furthermore,-ray count rate, detection efficiency, and pulse rise time proportional to the signal charge collection time were estimated using 60 keV-rays.