Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
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氧等离子体处理对溶液法a-IGZO薄膜晶体管器件性能的影响
DOI：
10.1016/j.apsusc.2013.07.007
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发表时间：
2013-10-15
影响因子：
6.7
通讯作者：
Zhang, Qun
中科院分区：
文献类型：
--
作者：
Pu, Haifeng;Zhou, Qianfei;Zhang, Qun
报道了氧等离子体处理对溶液处理非晶态氧化铟镓锌(a-IGZO)薄膜晶体管(TFT)的影响。等离子体处理的器件表现出更高的迁移率、更大的通断电流比，但SS也随着等离子体处理时间的增加而单调增加。根据光致发光(PL)测量，这一现象主要是由于氧等离子体中的两个组分，原子氧和O-2(+)。原子氧与沟道层中的氧空位反应，提高了迁移率，O-2(+)倾向于聚集在表面，同时起到捕获态的作用。我们的研究表明，可以采用适中的氧等离子体处理来改善器件的性能，同时应该消除O-2(+)以获得良好的界面状态。(C)2013爱思唯尔B.V.保留所有权利。
We reported the impact of oxygen plasma treatment on solution-processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs). Plasma-treated devices showed higher mobility, larger on/off current ratio, but a monotonically increased SS with plasma treatment time as well. The phenomenon was mainly due to two components in oxygen plasma, atomic oxygen and O-2(+), according to the photoluminescence (PL) measurement. Atomic oxygen reacted with oxygen vacancies in channel layer resulting in an improved mobility, and O-2(+) tends to aggregated at the surface acting as trapping states simultaneously. Our study suggests that moderate oxygen plasma treatment can be adopted to improve the device performance, while O-2(+) should be eliminated to obtain good interfacial states. (C) 2013 Elsevier B.V. All rights reserved.