Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview
Carbon Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview
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DOI：
10.1109/jeds.2013.2244641
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发表时间：
2013-01-01
影响因子：
2.3
通讯作者：
Wang, Dawei
中科院分区：
文献类型：
--
作者：
Schroeter, Michael;Claus, Martin;Wang, Dawei
碳基电子学是一个新兴领域。其目前的进展主要由材料科学界主导，因为实现实际竞争性晶体管仍然存在许多与材料相关的障碍。与石墨烯相比，碳纳米管为构建场效应晶体管提供了更好的性能，因此最终成为生产技术的机会更高。本文从电气工程和射频模拟应用的角度概述了CNTFET技术的最新发展。重要的材料性能，由此产生的设备结构，它们的制造，和最相关的建模概念进行了简要回顾。此外，器件和电路性能的最新结果和未来的前景，在实际要求和应用的背景下。
Carbon-based electronics is an emerging field. Its present progress is largely dominated by the materials science community due to the many still existing materials-related obstacles for realizing practically competitive transistors. Compared to graphene, carbon nanotubes provide better properties for building field-effect transistors, and thus, have higher chances for eventually becoming a production technology. This paper provides an overview on the state-of-the-art of CNTFET technology from an electrical engineering and radio frequency analog applications point of view. Important material properties, resulting device structures, their fabrication, and the most relevant modeling concepts are briefly reviewed. Furthermore, recent results on device and circuit performance and the future prospects are presented in the context of practical requirements and applications.