The Structural, optical and electrical properties of nanocrystalline ZnO:Al thin films
The Structural, optical and electrical properties of nanocrystalline ZnO:Al thin films
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DOI：
10.1016/j.spmi.2014.01.005
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发表时间：
2014-04-01
影响因子：
3.1
通讯作者：
Benramache, Said
中科院分区：
文献类型：
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作者：
Benhaoua, Boubaker;Rahal, Achour;Benramache, Said
采用超声喷涂技术制备了Al掺杂ZnO薄膜。研究了Al掺杂对ZnO薄膜结构、光学和电学性能的影响。一组Al掺杂的ZnO（0-3.5重量%）在350摄氏度下沉积。在Al掺杂后，观察到具有六方纤锌矿结构的纳米晶薄膜，具有强的（002）择优取向。当Al掺杂量为3 wt.%时，ZnO的晶粒尺寸达到最大值（33.28nm）。评价的四个主峰的质地系数TC（hkl）。在可见光区，透射谱T（λ）表明，掺杂薄膜的透射率低于未掺杂薄膜的透射率，未掺杂薄膜的透射率大于80%，而在相同的可见光区，掺杂薄膜的透射率受掺杂比的影响。随着掺杂浓度从0增加到2.75重量%，掺杂后带隙（E-g）从3.267增加到3.325 eV，根据Burstein-Moss效应（E-g的蓝移），然后超过3重量%，掺杂时，由于Roth效应和Burstein-Moss效应的共存，禁带宽度略有减小。膜的电阻率从20下降到5.26（Ω cm）。使用2.75wt.% Al掺杂ZnO薄膜(C)2014爱思唯尔有限公司版权所有。
The Al doped ZnO thin films were deposited by ultrasonic spray technique. The influence of Al doping on structural, optical and electrical properties of the ZnO thin films was studied. A set of Al doped ZnO (0-3.5 wt.%) were deposited at 350 degrees C. Nanocrystalline films with a hexagonal wurtzite structure with a strong (002) preferred orientation were observed after Al doping. The maximum value of grain size (33.28 nm) is attained with Al doped ZnO at 3 wt.%. Texture coefficient TC(hkl) of the four major peaks where evaluated. Optically, in visible region the transmissions spectra T(lambda) show that the whole doped films exhibit lower values than the non doped one which has as transmittance more than 80%; whereas in the same region the optical transmissions of the doped films are affected by the doping ration. The band gap (E-g) increased after doping from 3.267 to 3.325 eV with increasing concentration of doping from 0 to 2.75 wt.%, respectively, according to the Burstein-Moss effect (blue shift of E-g) then beyond 3 wt.% in doping the band gap exhibit a slight decreasing due to the coexistence of Roth and Burstein-Moss effect. The electrical resistivity of the films decreased from 20 to 5.26 (Omega cm). The best results are achieved with 2.75 wt.% Al doped ZnO film. (C) 2014 Elsevier Ltd. All rights reserved.