Spatial defects nanoengineering for bipolar conductivity in MoS2
Spatial defects nanoengineering for bipolar conductivity in MoS2
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DOI：
10.1038/s41467-020-17241-1
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发表时间：
2020-07
影响因子：
16.6
通讯作者：
Xiaorui Zheng;A. Calò;Tengfei Cao;Xiangyu Liu;Zhujun Huang;P. M. Das;M. Drndić;E. Albisetti
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作者：
Xiaorui Zheng;A. Calò;Tengfei Cao;Xiangyu Liu;Zhujun Huang;P. M. Das;M. Drndić;E. Albisetti
理解二维过渡金属二硫属化物中缺陷的原子起源、它们对电子性质的影响以及如何控制它们对于未来的电子学和光电子学至关重要。在这里，我们展示了集成的热化学扫描探针光刻（tc-SPL）与流通的反应气体电池，以实现在单层二硫化钼缺陷的纳米级控制。tc-SPL产生的缺陷可以根据需要呈现p型或n型掺杂，这取决于所使用的气体，允许实现场效应晶体管和具有精确亚μm空间控制的p-n结，以及超过104的整流比。掺杂和缺陷的形成，阐明通过X射线光电子能谱，扫描透射电子显微镜，密度泛函理论。研究发现，在HCl/H_2O气氛中，p型掺杂与表面硫原子的重排以及突出的共价S-S键的形成有关。或者，在N2中局部加热MoS 2产生n字符。
Understanding the atomistic origin of defects in two-dimensional transition metal dichalcogenides, their impact on the electronic properties, and how to control them is critical for future electronics and optoelectronics. Here, we demonstrate the integration of thermochemical scanning probe lithography (tc-SPL) with a flow-through reactive gas cell to achieve nanoscale control of defects in monolayer MoS2. The tc-SPL produced defects can present either p- or n-type doping on demand, depending on the used gasses, allowing the realization of field effect transistors, and p-n junctions with precise sub-μm spatial control, and a rectification ratio of over 104. Doping and defects formation are elucidated by means of X-Ray photoelectron spectroscopy, scanning transmission electron microscopy, and density functional theory. We find that p-type doping in HCl/H2O atmosphere is related to the rearrangement of sulfur atoms, and the formation of protruding covalent S-S bonds on the surface. Alternatively, local heating MoS2in N2produces n-character.