Resistivity of Thin Copper Interconnection Layers
Resistivity of Thin Copper Interconnection Layers
复制标题
DOI：
10.1143/jjap.44.l408
复制
发表时间：
2005-03
影响因子：
1.5
通讯作者：
T. Hara;Yasuhiro Shimura;K. Namiki
中科院分区：
文献类型：
--
作者：
T. Hara;Yasuhiro Shimura;K. Namiki
在薄电镀铜层中定量观察电阻率。通过传统电镀在600 nm厚的沉积铜层中观察到2.6 µΩ·cm的电阻率。该电阻率随着厚度的减小而迅速增加，并在75 nm的厚度处达到7.8 µΩ·cm。这种快速增加主要是由于铜(111)/(200)取向比的增加。在具有低取向比的75nm低电阻率层中，沉积层的电阻率保持在2.2μΩ·cm。这种低电阻率薄层实际上是通过新开发的工艺电镀的。在该电镀过程中还需要制备低应力种子层。
Resistivity is observed quantitatively in a thin electroplated copper layer. A resistivity of 2.6 µΩ·cm is observed in a 600-nm-thick as-deposited copper layer by conventional electroplating. This resistivity increases rapidly with decreasing thickness and reaches 7.8 µΩ·cm at a thickness of 75 nm. This rapid increase is mainly due to the increase in the orientation ratio of the copper (111)/(200). The resistivity in the as-deposited layer is maintained at 2.2 µΩ·cm in a 75 nm low resistivity layer with a low orientation ratio. Such a low-resistivity thin layer is electroplated practically by newly developed process. The preparation of a low-stress seed layer is also required in this electroplating process.