Transmission electron microscopy of interfaces in III–V compound semiconductors
Transmission electron microscopy of interfaces in III–V compound semiconductors
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III-V族化合物半导体界面的透射电子显微镜
DOI：
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发表时间：
1977
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通讯作者：
P. M. Petroff
中科院分区：
文献类型：
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作者：
P. M. Petroff
本文综述了透射电子显微镜（TEM）分析技术在III-V族化合物半导体结构中几种类型界面研究中的应用。简要讨论了用于分析晶格失配界面的TEM技术，因为它们对于大多数III-V族化合物是直接的。提出了在原子尺度上分析界面粗糙度和界面扩散的新技术。通过优化界面和电子束之间的衍射效应，可以在如此精细的尺度上研究界面结构。通过结合分子束外延沉积技术的良好控制来制造“界面超晶格”，并结合高分辨率暗场和晶格成像TEM技术，在原子尺度上分析了GaAs和AlAs薄膜之间的界面粗糙度。讨论了GaAs和AlAs界面的互扩散问题，提出了利用“界面超晶格”的两种方法。
This paper presents a review of the applications of transmission‐electron‐microscopy (TEM) analytical techniques to the study of several types of interfaces in III–V compound semiconductor structures. The TEM techniques for analysis of lattice mismatched interfaces are briefly discussed since they are straightforward for most III–V compounds. New techniques for analyzing interface roughness and interface diffusion on an atomic scale are presented. The study of interface structures on such a fine scale is made possible by optimizing the diffraction effects between interfaces and the electron beam. By combining the excellent control of the molecular‐beam‐epitaxy deposition technique to fabricate ’’interface superlattices’’ with high‐resolution dark‐field and lattice‐imaging TEM techniques, the interface roughness between ultrathin GaAs and AlAs films have been analyzed on an atomic scale. Interdiffusion at GaAs and AlAs interfaces is also discussed, and two methods which make use of ’’interface superlattice...