Effect of Al2O3-SiO2 substrate on gas-sensing properties of TiO2 based lambda sensor at high temperature
Effect of Al2O3-SiO2 substrate on gas-sensing properties of TiO2 based lambda sensor at high temperature
复制标题
Al2O3-SiO2基体对TiO2基氧传感器高温气敏性能的影响
DOI：
10.1016/j.ceramint.2017.11.054
复制
发表时间：
2018
影响因子：
5.2
通讯作者：
Zhimin Li
中科院分区：
文献类型：
--
作者：
Maolin Zhang;Tao Ning;Peng Sun;Yangxi Yan;Dongyan Zhang;Zhimin Li
氧化铝广泛用作氧λ传感器的基底材料。据报道，传感器的响应特性高度依赖于衬底的表面状态。本工作制备了Al_2O_3-x%SiO_2（x = 2-30）基片，用于高温工作的TiO_2基λ传感器。采用XRD、SEM、XPS等测试手段对所制备的基底的结构和表面状态进行了表征。采用丝网印刷法制备了TiO 2敏感薄膜。结果表明，在Al 2 O3 - 10%SiO2衬底上制备的传感器具有最佳的传感性能。此外，所有传感器的最终稳态电压在600-800 ℃被限制为小于100 mV。
Alumina is widely used as substrate material for oxygen lambda sensors. It has been reported that response properties of sensors are highly dependent on surface state of substrates. In this work, Al2O3-x%SiO2(x = 2–30) substrates were specially prepared for TiO2based lambda sensors for high temperature operation. Structure and surface state of prepared substrates were characterized by XRD, SEM and XPS. TiO2sensing film was prepared by screen printing method. Results indicated that sensors fabricated on Al2O3-10%SiO2substrate exhibited the best sensing properties. Moreover, final steady-state voltages of all sensors were limited to less than 100 mV at 600–800 ℃.