Peculiarities of step bunching on Si(001) surface induced by DC heating
Peculiarities of step bunching on Si(001) surface induced by DC heating
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直流加热引起的 Si(001) 表面阶梯聚束的特性
DOI：
10.1016/s0169-4332(98)00040-3
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发表时间：
1998
影响因子：
6.7
通讯作者：
A. Aseev
中科院分区：
文献类型：
--
作者：
A. Latyshev;L. Litvin;A. Aseev
利用超高真空反射电子显微镜（UHVREM）直接观察到电流加热晶体引起的Si（001）台阶表面的演化。步骤聚束的初始阶段的两个方案，取决于平均步长的距离，被检测到：单原子的步骤耦合和多中心成核的大梯田。从阶梯聚束的连续REM图像，聚束中的阶梯数量被认为取决于退火时间，作为幂律函数，标度指数等于0.53±0.05。此外，在束中的耦合步骤之间的平均距离被测量为在此束中的耦合步骤的数量的平方根依赖性。尽管Si（001）和Si（111）表面的结构性质有本质的不同，但单原子台阶行为似乎可以用直流加热引起的台阶聚束的动力学机制来描述。
An evolution of the stepped Si(001) surface, induced by the electric current heating the crystal, has been observed directly by an in situ ultra-high vacuum reflection electron microscopy (UHV REM). Two scenarios of the initial stages of step bunching, depending on the average step–step distance, were detected: monatomic step coupling and polycentric nucleation of large terraces. From the successive REM images of step bunching, the step number in the bunch was accounted to depend on the annealing time as a power-law function with a scaling exponent equal to 0.53±0.05. Also, the average distance between coupled steps in the bunch was measured as a root-square dependence on the number of the coupled steps in this bunch. In spite of essential difference in the structural properties of Si(001) and Si(111) surfaces, the monatomic step behavior seems to be described by the same kinetic mechanism of step bunching induced by DC heating.