XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide
XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide
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DOI：
10.1016/j.apsusc.2017.02.006
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发表时间：
2017-05-31
影响因子：
6.7
通讯作者：
Baker, Mark A.
中科院分区：
文献类型：
--
作者：
Simpson, Robin;White, Richard G.;Baker, Mark A.
近年来，气体团簇离子束（GCIB）已成为离子束溅射刻蚀有机材料表面分析技术的前沿。然而，目前对氩团簇离子（Ar-n（+））蚀刻金属氧化物和其他技术上重要的无机化合物的能力知之甚少，并且以前没有报道过深度分布。在这项工作中，XPS深度剖面通过认证（欧洲标准BCR-261 T）30 nm厚的Ta 2 O 5层生长在Ta箔上使用单原子Ar+和Ar-1000（+）团簇离子已在不同的入射能量进行。使用6 keV Ar-1000（+）离子诱导的氧的优先溅射相对于3 keV和500 eV Ar+离子较低。Ar+离子在整个氧化物中表现出稳定的O/Ta比，而Ar-1000（+）离子的O/Ta比随着深度的增加而逐渐降低。与团簇束相比，单原子束的深度分辨率和蚀刻速率基本上更好。与Ar+分布相比，当下面的Ta块体金属被溅射用于Ar-1000（+）分布时，观察到更高的O浓度。(C)2017作者出版社：Elsevier B. V.
In recent years, gas cluster ion beams (GCIB) have become the cutting edge of ion beam technology to sputter etch organic materials in surface analysis. However, little is currently known on the ability of argon cluster ions (Ar-n(+)) to etch metal oxides and other technologically important inorganic compounds and no depth profiles have previously been reported. In this work, XPS depth profiles through a certified (European standard BCR-261T) 30 nm thick Ta2O5 layer grown on Ta foil using monatomic Ar+ and Ar-1000(+) cluster ions have been performed at different incident energies. The preferential sputtering of oxygen induced using 6 keV Ar-1000(+) ions is lower relative to 3 keV and 500 eV Ar+ ions. Ar+ ions exhibit a steady state O/Ta ratio through the bulk oxide but Ar-1000(+) ions show a gradual decrease in the O/Ta ratio as a function of depth. The depth resolution and etch rate is substantially better for the monatomic beam compared to the cluster beam. Higher 0 concentrations are observed when the underlying Ta bulk metal is sputtered for the Ar-1000(+) profiles compared to the Ar+ profiles. (C) 2017 The Authors. Published by Elsevier B.V.