Electrical control of 180° domain walls in an antiferromagnet
Electrical control of 180° domain walls in an antiferromagnet
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DOI：
10.1063/5.0156508
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发表时间：
2023-09
期刊：
影响因子：
6.1
通讯作者：
O. Amin;S. Reimers;F. Maccherozzi;S. S. Dhesi-S.;V. Novák;R. Campion;K. Edmonds;P. Wadley
中科院分区：
文献类型：
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作者：
O. Amin;S. Reimers;F. Maccherozzi;S. S. Dhesi-S.;V. Novák;R. Campion;K. Edmonds;P. Wadley
我们证明了CuMnAs器件中180°反铁磁磁畴壁的可逆电流感应运动。通过控制电流脉冲的大小和方向，可以在三个不同的钉扎点之间切换域壁的位置。由于CuMnAs的晶体对称性，磁畴壁的运动归因于类场的自旋轨道扭矩，该扭矩在每个磁性亚晶格上引起相同的旋转感。在室温下，当电流密度降到≈2.5×10~(10)A/m~2时，观察到了磁畴壁运动。
We demonstrate the reversible current-induced motion of 180° antiferromagnetic domain walls in a CuMnAs device. By controlling the magnitude and direction of the current pulse, the position of a domain wall can be switched between three distinct pinning sites. The domain wall motion is attributed to a field-like spin–orbit torque that induces the same sense of rotation on each magnetic sublattice, owing to the crystal symmetry of CuMnAs. Domain wall motion is observed for current densities down to ≈2.5×1010 A/m2 at room temperature.