Dislocation networks in phosphorus-implanted silicon
Dislocation networks in phosphorus-implanted silicon
复制标题
磷注入硅中的位错网络
DOI：
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发表时间：
1977
期刊：
影响因子：
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通讯作者：
Masao Tamuka
中科院分区：
文献类型：
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作者：
Masao Tamuka
摘要：通过透射电子显微镜观察了 50 keV、高剂量（1 × 1015 至 3 × 1016 离子/em2）磷注入硅（111）晶片中产生的缺陷，然后在惰性（干 N2）和氧化（湿 O2）气氛中进行 1100°C 等温退火。位错网络的形成与间隙型位错环的产生密切相关，间隙型位错环是由硅晶片中离子注入产生的点缺陷生长的。此外，在湿式 O2 退火中比在干式 N2 中更容易产生位错。在湿式 O2 退火中，对于注入剂量高于 3 × 1015 离子/cm2 的样品，通过退火在 1-2 分钟内形成位错网络，并且在退火过程中位错网络移动到晶圆中更深的深度。另一方面，在干式N2退火中，产生位错网络的临界离子剂量为1×1016个离子/cm2，并且在退火过程中，晶片中位错网络的位置通常保持不变。产生和运动的这种差异......
Abstract Observations, by transmission electron microscopy have been made on defects generated in 50 keV, high-dose (1 × 1015 to 3 × 1016 ions/em2) phosphorus-implanted silicon (111) wafers followed by 1100°C isothermal annealing in inert (dry N2) and oxidizing (wet O2) atmospheres. The formation of dislocation networks is closely associated with the generation of interstitial type dislocation loops which grow from point defects produced by ion implantation in silicon wafers. Also, dislocations grow more easily in wet O2 annealing than in dry N2. In wet O2 annealing, dislocation networks are formed by annealing within 1–2 min for samples implanted with doses above 3 × 1015 ions/cm2, and they move to deeper depths in the wafers during annealing. On the other hand, in dry N2 annealing, the critical ion dose for generation of dislocation networks is 1 × 1016 ions/cm2 and the location of dislocation networks in the wafers is usually unchanged during annealing. Such a difference in the generation and motion of...