Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors
Improvement of subthreshold current transport by contact interface modification in p-type organic field-effect transistors
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DOI：
10.1063/1.3115826
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发表时间：
2009-04-06
影响因子：
4
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Kano, Masataka;Minari, Takeo;Tsukagoshi, Kazuhito
有机场效应晶体管（OFFET）的电荷注入效率被认为是决定这些器件亚阈值特性的关键因素。使用宽带隙有机半导体和金源/漏接触制造的MOSFET显示出大的阈值电压和差的亚阈值特性。在接触/半导体界面处插入金属氧化物电荷注入层降低了注入势垒高度，导致阈值电压和亚阈值斜率的显著改善和短沟道效应的强烈抑制。改善的亚阈值特性归因于增强的电荷注入和随之而来的促进电荷积累。
The charge injection efficiency of organic field-effect transistors (OFETs) is found to be a critical factor determining the subthreshold characteristics of these devices. OFETs fabricated using a wide band gap organic semiconductor and gold source/drain contacts display large threshold voltage and poor subthreshold characteristics. Insertion of a metal-oxide charge injection layer at the contact/semiconductor interface lower the injection barrier height, resulting in marked improvements in threshold voltage and subthreshold slope and strong suppression of the short-channel effect. The improved subthreshold characteristics are attributed to enhanced charge injection and the consequent promotion of charge accumulation.