Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
复制标题
使用空洞辅助分离技术通过氢化物气相外延制备独立式 GaN 晶圆
DOI：
10.1007/978-3-642-04830-2_4
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
T. Mishima
中科院分区：
文献类型：
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作者：
Y. Oshima;Takehiro Yoshida;Takeshi Eri;Watanabe Kazutoshi;M. Shibata;T. Mishima
本文概述了利用氢化物气相外延和真空辅助分离法制备独立GaN晶片的工艺及所得晶体的性能。通过施加热应力，可以从基板上分离出大面积的厚氮化镓层，并具有良好的再现性。在厚氮化镓层和基板之间的界面附近形成的许多空隙有助于这一过程。通过这种方法，可以得到直径超过3英寸的大面积高质量氮化镓晶圆。已经准备好了。
An outline is presented of the fabrication technique of freestanding GaN wafers by hydride vapor phase epitaxy using the void-assisted separation method and the properties of resulting crystals. A thick GaN layer of large area can be separated with excellent reproducibility from a base substrate by the application of thermal stress. This process is assisted by numerous voids formed near the interface between the thick GaN layer and the base substrate. By using this method, high-quality GaN wafers of large area with diameters of over 3 in. have been prepared.