XPS characterization of surface and interfacial structure of sputtered TiNi films on Si substrate
XPS characterization of surface and interfacial structure of sputtered TiNi films on Si substrate
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DOI：
10.1016/j.msea.2005.04.036
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发表时间：
2005-08-25
期刊：
影响因子：
6.4
通讯作者：
Huang, WM
中科院分区：
文献类型：
--
作者：
Fu, YQ;Du, HJ;Huang, WM
采用共溅射TiNi和Ti靶的方法制备了TiNi薄膜。用X射线光电子能谱(XPS)研究了薄膜的表面化学结构和Si/TiNi系统的界面结构。将TiNi薄膜暴露在环境大气中(23摄氏度，相对湿度80%)，有利于氧和碳在表面上的快速吸附。随着时间的推移，表面的碳和氧含量急剧增加，而氧则进一步扩散到层中。一年后，表面碳含量高达65.57%，镍降至XPS的检测下限以下。深度剖析表明，TiNi薄膜与Si衬底之间发生了明显的互扩散，扩散层厚度为90-100 nm。利用XPS获得了不同元素随深度的详细成键变化，并确定了界面处钛硅化物的形成。(C)2005爱思唯尔B.V.保留所有权利。
TiNi films were prepared by co-sputtering TiNi and Ti targets. X-ray photoelectron spectroscopy (XPS) was employed to study surface chemistry of the films and interfacial structure of Si/TiNi system. Exposure of the TiNi film to the ambient atmosphere (23 degrees C and 80% relatively humidity) facilitated quick adsorption of oxygen and carbon on the surface. With time, carbon and oxygen content increased drastically at the surface, while oxygen diffused further into the layer. After a year, carbon content at the surface became as high as 65.57% and Ni dropped below the detection limit of XPS. Depth profiling revealed that significant inter-diffusion occurred between TiNi film and Si substrate with a layer of 90-100 nm. The detailed bond changes of different elements with depth were obtained using XPS and the formation of titanium silicides at the interface were identified. (c) 2005 Elsevier B.V All rights reserved.