Miniaturization of thick–film resistors by laser–shaping

Miniaturization of thick–film resistors by laser–shaping
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通过激光整形实现厚膜电阻器的小型化

DOI:
10.1109/isse.2010.5547261
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发表时间:
2010
期刊:
33rd International Spring Seminar on Electronics Technology, ISSE 2010
影响因子:
--
通讯作者:
J. Cilensek
J. Cilensek
中科院分区:
--
文献类型:
--
作者:
Damian Nowak;A. Dziedzic;M. Hrovat;J. Cilensek

文献摘要

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本文介绍了激光型厚膜电阻器的制造工艺及其电学性能、几何性能、显微组织性能和稳定性。测试结构基于市售的导电和电阻糊沉积在Al2O3衬底上。在标准丝网印刷工艺中,电阻器在烧制后使用激光束进行图像化,以将其平面尺寸减小到十分之一毫米及以下。制备的样品进行了多次电学测试,并在此基础上计算了电阻温度系数(TCR)等特征参数。测试样品也暴露在长期热老化中。利用激光轮廓仪对零件进行了三维表征。利用扫描电子显微镜(SEM)对样品进行了微观结构分析,并给出了样品的能谱图(EDS)。
This paper presents manufacturing process of laser-shaped thick-film resistors as well as their chosen electrical, geometrical, microstructural and stability properties. Test structures were based on commercially available conductive and resistive pastes deposited on Al2O3 substrates. Resistors made in standard screen printing process after firing were patterned using laser beam in order to minimize their planar dimensions to tenths of millimeter and below. Prepared samples were subjected to number of electrical tests and some characteristic parameters like temperature coefficient of resistance (TCR) were calculated based on these measurements. Test samples were also exposed to long-term thermal ageing. Moreover the laser profilometer was used for three-dimensional characterization of components. Scanning electron microscope (SEM) was used for the microstructural analysis and the EDS (Energy Dispersive X-ray Spectroscopy) of samples is given.