Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors
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DOI：
10.1021/acsami.6b13866
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发表时间：
2017-02-01
影响因子：
9.5
通讯作者：
Slesazeck, Stefan
中科院分区：
文献类型：
--
作者：
Mulaosmanovic, Halid;Ocker, Johannes;Slesazeck, Stefan
The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.
