Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
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DOI：
10.1103/physrevlett.110.177406
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发表时间：
2013-04-25
影响因子：
8.6
通讯作者：
Weisbuch, Claude
中科院分区：
文献类型：
--
作者：
Iveland, Justin;Martinelli, Lucio;Weisbuch, Claude
我们报告的明确检测俄歇电子的电子发射光谱从cesiated InGaN/GaN发光二极管下电注入。电子发射光谱作为注入到设备中的电流的函数进行测量。与观察到的电致发光效率下降同时出现的高能电子峰表明，通过俄歇过程在有源区（InGaN量子威尔斯）中产生热载流子。在高能量发射的电子电流和“下垂电流”-用于光发射的注入电流的缺失分量之间测量线性相关性。我们的结论是GaN发光二极管中的下垂现象起源于俄歇过程的激发。DOI：10.1103/PhysRevLett.110.177406
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light-emitting diode under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the "droop current"-the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN light-emitting diodes originates from the excitation of Auger processes. DOI: 10.1103/PhysRevLett.110.177406