Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing
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DOI：
10.7567/jjap.56.06gf09
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发表时间：
2017-05
影响因子：
1.5
通讯作者：
Kwan-Soo Kim;Goon-Ho Park;H. Fukidome;T. Suemitsu;T. Otsuji;W. Cho;M. Suemitsu
中科院分区：
文献类型：
--
作者：
Kwan-Soo Kim;Goon-Ho Park;H. Fukidome;T. Suemitsu;T. Otsuji;W. Cho;M. Suemitsu
我们提出了一种在外延石墨烯（EG）上无损伤形成高质量栅极电介质的方法，该方法涉及基于溶液的Al2O3涂层结合微波辅助退火（MW-sol-Al2O3）。该方法在最小化空穴掺杂和应变诱导的情况下，基本上保留了EG的原始性质。MW-sol-Al2O3的表面粗糙度为~ 0.237 nm，介电常数为7.5。泄漏电流为8.7 × 10−6 A/cm2，比天然Al2O3在相同电场下的泄漏电流小3个数量级。这些优异的MW-sol-Al2O3性能归因于通过微波辅助退火有效地消除了薄膜中的羟基和羧基相关成分。
We propose a damage-free formation method for high-quality gate dielectrics on epitaxial graphene (EG), which involves solution-based Al2O3 coating combined with microwave-assisted annealing (MW-sol-Al2O3). This method substantially preserves the pristine properties of EG with minimized hole doping and strain induction. The MW-sol-Al2O3 showed a surface roughness of ∼0.237 nm and a dielectric constant of 7.5. A leakage current of 8.7 × 10−6 A/cm2, which is 3 orders of magnitude smaller than that of natural Al2O3 at the same electric field, was obtained. These excellent MW-sol-Al2O3 properties are ascribed to the effective elimination of hydroxyl- and carboxyl-related components from the film by microwave-assisted annealing.