Tunnel-magnetoresistance system with an amorphous detection layer
Tunnel-magnetoresistance system with an amorphous detection layer
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具有非晶检测层的隧道磁阻系统
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
J. Wecker
中科院分区：
文献类型：
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作者：
A. Käufler;Yuansu Luo;K. Samwer;G. Gieres;M. Vieth;J. Wecker
我们研究了使用非晶 CoFeNiSiB 软磁层的磁隧道结。在室温下，非晶层的切换场为 12 Oe，隧道磁阻比为 12%。通过退火可以将效果增强高达 22%。对单个非晶层的研究表明，即使对于非常薄的层，其热稳定性也高达 350°C 的退火温度。由于特殊的制备技术，倾斜入射效应会产生面内各向异性，这可能会影响非晶相的短程有序。
We have studied magnetic tunnel junctions using an amorphous CoFeNiSiB soft magnetic layer. At room temperature a tunnel-magnetoresistance ratio of 12% was achieved with a switching field of the amorphous layer of 12 Oe. The effect could be enhanced up to 22% by annealing. Investigations on single amorphous layers show a thermal stability up to 350 °C annealing temperature even for very thin layers. Due to the special preparation technique, an in-plane anisotropy is induced resulting from an oblique-incidence effect which presumably affects the short-range order of the amorphous phase.