"Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface."
"Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface."
复制标题
“具有原子平坦的 Ge/GeO2 界面的 Ge n-MOSFET 中的高 Ns 电子迁移率显着增强。”
DOI：
10.1149/06103.0147ecst
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and A. Toriumi
中科院分区：
文献类型：
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作者：
C. H. Lee;T. Nishimura;C. Lu;W. Zhang;K. Nagashio;and A. Toriumi
Ge n-MOSFET中高ns电子迁移率的快速退化仍然是Ge CMOS技术中最大的关注点之一。虽然有许多可能的起源到目前为止考虑，降解机制仍然不清楚，尽管它的重要性。在这项工作中，我们澄清晶片相关的起源，在锗n-MOSFET的电子迁移率退化。由于（i）原子级平坦的Ge表面形成，随后（ii）逐层氧化，高Ns电子迁移率显著改善。(iii)Ge衬底中与氧有关的中性杂质可能是Ge晶片上迁移率降低的另一个来源。通过成功地消除这些散射源在锗n-MOSFET，我们表现出固有的高电子迁移率在很宽的范围内的Ns。
The rapid degradation of high-Ns electron mobility in Ge n-MOSFETs is still one of the greatest concerns in Ge CMOS technology. Although there are many possible origins so far considered, the degradation mechanism is still unclear in spite of its importance. In this work, we clarify wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility is dramatically improved thanks to (i) atomically flat Ge surface formation, followed by (ii) layer-bylayer oxidation.(iii) Oxygen-related neutral impurities in Ge substrates could be another origin of the mobility reduction on Ge wafers. By successfully eliminating these scattering sources in Ge n-MOSFETs, we demonstrate intrinsically high electron mobility in a wide range of Ns.